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| NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25C Case Temperature D Collector-Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: (TC = +25C unless otherwise specifieid) Collector-Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Continuous Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Derate Linearly to 150C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.64W/C Continuous Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Linearly to 150C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Typical Thermal Resistance, Case-to-Heat Sink (Note 2), RthCHS . . . . . . . . . . . . . . . . . . . . 0.7C/W Lead Temperature (During Soldering, 1/8" from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . +260C Note 1. This value applies for tw 5ms, duty cycle 10%. Note 2. This parameter is measured using 0.003" (0.08mm) mica insulator with Dow-Corning 11 compound on both sides of the insulator, a 0.138-32 (formally 6-32) mounting screw with bushing, and a mounting torque of 8 in*lb (0.9 n*m). Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current Symbol Test Conditions Min 400 400 400 - - Typ - - - - - Max - - - 250 15 Unit V V V A mA V(BR)CBO IC = 1mA, IE = 0, Note 3 V(BR)CEO IC = 10mA, IB = 0, Note 3 VCEX(sus) ICEO IEBO IC = 7A VCE = 400V, IB = 0 VEB = 8V, IC = 0 DC Current Gain hFE IC = 2.5A, VCE = 5V, Note 3, Note 4 IC = 5A, VCE = 5V, Note 3, Note 4 IC = 7A, VCE = 5V, Note 3, Note 4 150 50 15 - - - - - - - - 2.2 V Base-Emitter Voltage VBE IB = 100mA, IC = 2A, Note 3, Note 4 IB = 250mA, IC = 5A, Note 3, Note 4 IB = 10mA, IC = 1A, Note 3, Note 4 IB = 100mA, IC = 2A, Note 3, Note 4 IB = 250mA, IC = 5A, Note 3, Note 4 - - - - - 200 10 - - - - - - - - - - - - - 3400 1520 160 20 3900 4700 1200 1200 2000 2.3 1.5 1.5 2.0 3.5 - - 100 - - - - - - - - - V V V V V Collector-Emitter Saturation Voltage VCE(sat) Diode Forward Voltage Small-Signal Current Gain Small-Signal Forward Current Transfer Ratio Collector Capacitance Turn-Off Storage Time Turn-Off Fall Time Turn-Off Rise Time Turn-On Delay Time Voltage Storage Time Current Storage Time Voltage Rise Time Storage Rise Time Turn-Off Crossover Time VF hfe |hfe| Cobo ts tf tr td tsv tsi trv tri txo IF = 7A, Note 3, Note 4 VCE = 5V, IC = 500mA, f = 1kHz VCE = 5V, IC = 500mA, f = 1kHz IE = 0, VCB = 10V, f = 1MHz IC = 5A, IB1 = 250mA, IB2 = -250mA, VBE(off) = -7.3V, RL = 50, Note 5 pF ns ns ns ns ns ns ns ns ns Resistive-Load Switching Characteristics (TC = +25C unless otherwise specified) Inductive-Load Switching Characteristics (TC = +25C unless otherwise specified) V(clamp) = Min VCEX(sus), ICM = 5A, IB1 = 250mA, IB2 = -250mA, Note 5 - - - - - Note 3. These parameters must be measured using pulse techniques, tw = 300s, duty cycle 2%. Note 4. These parameters are measured with voltage-sensing contacts separate from the current- carrying contacts located within 1/8" (3.2mm) from the device body. Note 5. Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. C B E .420 (10.67) Max .110 (2.79) C .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector |
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